growth of multicrystalline Si with controlled grain boundary

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Growth of multicrystalline Si with controlled grain boundary
configuration by the floating zone technique
Masayuki Kitamura, Noritaka Usami
, Takamasa Sugawara,
Kenrato Kutsukake, Kozo Fujiwara, Yoshitaro Nose, Toetsu Shishido,
Kazuo Nakajima
Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Received 14 December 2004; accepted 6 April 2005
Communicated by G. Muller