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Growth of multicrystalline Si with controlled grain boundary
configuration by the floating zone technique
Masayuki Kitamura, Noritaka Usami, Takamasa Sugawara,
Kenrato Kutsukake, Kozo Fujiwara, Yoshitaro Nose, Toetsu Shishido,
Kazuo Nakajima
Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Received 14 December 2004; accepted 6 April 2005
Communicated by G. Muller
